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PDF) Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
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Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric | ACS Applied Materials & Interfaces
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PDF) Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
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